features fast switching s peed for gener al purpose s w itc hing applicat ions high con ductance absolute maxim um rating s t a = 2 5 paramet er sym bol rating unit non -re petitive peak rev erse voltage v rm 100 v peak repetitive rev erse voltage v rrm w orking peak rever se v oltage v rw m dc block ing voltage v r rm s rever se v oltage v r(rms) 53 v avera ge rectified output cur rent i o 200 m a forw ard co ntinuous curr ent i fm 300 m a non -re petitive peak forw ard surg e curr ent @ t = 1.0 s 2.0 @ t = 1.0s 1.0 pow er dissipation p d 225 m w thermal resis tance j unction to am bient air r ja 556 /w oper ating and storage temperature range t , t stg -55 to +150 a 75 v i fsm ele ctr ical characteristics t a = 25 paramet er sym bol test c onditons min typ ma x unit rev erse breakdow n voltage v (br)r i r =100 a 75 v i f = 1.0m a 0.715 i f = 10m a 0.855 i f = 50m a 1.0 i f = 150m a 1.25 v r = 75v 1.0 a v r = 20v 25 na junct ion capa cit ance c j v r = 0, f = 1.0mhz 2 pf rev erse recove ry tim e t rr i f = i r = 10m a,i rr = 0.1 x i r , r l = 100 4 ns v v f forw ard voltage i r leakage curre nt 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 marking da n212k marking a6 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
1 2 3 5 10 20 30 50 100 11 0 120 130 1 4 0 1 5 0 r e v erse c urrent, i r [ u a] r ta= 25 c ta= 25 c gener al r ule: t he reverse current of a di ode will approximately double for every ten (10) degree c increase in temperature 10 20 30 50 70 100 0 50 100 150 200 250 300 reverse voltage, v r [v] reverse current, i r [na] 225 1 2 3 5 10 20 30 50 100 250 300 350 400 450 forward current, i f [ua] forward voltage, v f [mv] f f 485 ta= 25 c 0 . 1 0 . 2 0 . 3 0 . 5 1 2 3 5 10 450 500 550 600 650 700 forward current, i f [ma] forward voltage, v f [mv] f 725 ta= 25 c reverse voltage, v r [v] 10 20 30 50 100 200 300 500 0.6 0.8 1 1.2 1.4 forward current, i f [ma] forward voltage, v f [v] f 1.5 ta = 2 5 c 02468101214 1 1.1 1.2 1.3 r everse v oltage [v] total cap a citance, c t [p f] ta = 2 5 c 15 figure 1. reverse voltage vs reverse current bv - 1.0 to 100 ua figure 2. reverse current vs reverse voltage ir - 10 to 100 v figure 3. forward voltage vs forward current vf - 1.0 to 100 ua figure 4. forward voltage vs forward current vf - 0.1 to 10 ma figure 5. forward voltage vs forward current vf - 10 - 800 ma figure 6. total capacitance typical characteristics da n212k product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
05 0 10 0 150 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 i - f o r w ard c urr e nt s t e a d y s t a te - m a o d r a i o - a v e ra g e r e c t i f i e d c urr e nt - m a i r r ( r e v e r s e r e c o v e ry c u rr e n t ) = 1 . 0 ma - r l o o p = 1 0 0 o h ms 10 20 30 40 50 60 1 1 . 5 2 2 . 5 3 3 . 5 4 reverse current [ma] reverse recovery time, t rr [ns] t a = 2 5 c 0 5 0 1 00 1 50 2 00 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 average temperature, i o ( c ) power dissipation, p d [m w] o 050100150 0 100 200 300 400 i f( a v ) - ave rag e re ct i f i e d curre nt - m a c u rr e n t [ m a] ambient temperature, t a [ c] figure 7. reverse recovery time figure 8. average rectified current (i f(av) )
vs reverse current versus
ambient temperature (t a ) trr - ir 10 ma vs 60 ma figrue 9. power derating curve o da n212k product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123
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